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Titanium nitride coated silicon wafer and glass slide

The titanium nitride coated substrates are offered as a Ø 4”/100mm silicon wafer and microscope slide, coated with 50nm of pure titanium nitride (99.995%). Titanium nitride (TiN) thin films have excellent thermal and bio stabilities, strength coupled with resistance to corrosion under extreme conditions. TiN is often applied as an effective hard coating on steel, carbide, and aluminum components. It can also be used to protect sliding surfaces, such as a tribological layers for cutting tools and is used as an excellent non-toxic coating in biomedical devices. Thin film TiN is also used in microelectronics, where it is used as both a metal and silicon diffusion layer and an excellent conductive connection between active devices and metal contacts.

Coating method
For these coatings an effective low-temperature method is used to deposit ultra-pure, highly dense, and conductive TiN (~ 50-70 µΩ·cm) thin films onto glass and silicon substrates. This is achieved using a new reactive Bipolar High Power Impulse Magnetron Sputtering (Bi-HiPIMS) technology. HiPIMS uses pulsed power at very high peak power density that yields a high ionisation of sputtered species. A positive reverse voltage is applied immediately after the normal negative HiPIMS pulse (“Bipolar” HiPIMS) which accelerates the ions towards the substrate surface while simultaneously exposing them to reactive nitrogen gas. This ion bombardment on the surface of the growing film is essential for creating a high-quality and dense TiN coating without needing to rely on extreme temperatures, which are often required for more traditional sputtering methods. The titanium nitride coating is not atomically flat –  there are height differences in the nanometer range. For protection, the wafers are packed in wafer carrying trays and the slides are packed in slide mailers.

 

Specifications of titanium nitride coated silicon wafer and microscope slide

Titanium nitride coating

50 nm TiN (99.995% purity)

Adhesion film

none

Surface roughness

Several nm

Substrate

Silicon wafer

Microscope slide

Dimensions

Ø 4” / 100 mm

75×25 mm

Thickness

525 µm (+/- 20 µm

1mm

Material type

P (Boron) –  <100> – 1-30 Ohm/cm

Borofloat 33 – borosilicate glass

 

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